DMG1016V
N-CHANNEL – Q 1
1.0
0.8
0.6
0.4
V GS = 8.0V
V GS = 4.5V
V GS = 3.0V
V GS = 2.5V
V GS = 2.0V
V GS = 1.5V
1.0
0.8
0.6
0.4
0.2
V GS = 1.2V
0.2
T A = 150°C
T A = 125°C
T A = 85°C
T A = 25°C
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
5
0
0
T A = -55°C
0.5 1 1.5
2
0.8
0.7
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0.5
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
0.6
0.4
T A = 150°C
T A = 125°C
0.5
0.4
V GS = 1.8V
0.3
T A = 85°C
T A = 25°C
0.3
V GS = 2.5V
0.2
T A = -55°C
V GS = 4.5V
0.2
0.1
0.1
0
0
0
0.2 0.4 0.6 0.8
1.0
0
0.2
0.4 0.6 0.8
1.0
1.7
I D , DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.8
I D , DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.5
0.6
1.3
1.1
0.9
0.7
V GS = 4.5V
I D = 500mA
V GS = 2.5V
I D = 250mA
0.4
0.2
V GS = 2.5V
I D = 250mA
V GS = 4.5V
I D = 500mA
0.5
-50
-25 0
25 50 75 100 125 150
0
-50
-25 0 25 50 75 100 125 150
T A , AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
T A , AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG1016V
Document number: DS31767 Rev. 3 - 2
3 of 8
www.diodes.com
May 2009
? Diodes Incorporated
相关PDF资料
DMG1023UV-7 MOSFET P-CH DUAL 20V SOT563
DMG1024UV-7 MOSFET N-CH DUAL 20V SOT563
DMG1026UV-7 MOSFET DL N-CH 60V 410MA SOT-563
DMG1029SV-7 MOSFET N/P-CH 60V 480/320 SOT563
DMG2301U-7 MOSFET P-CH 20V 2.5A SOT23
DMG2302U-7 MOSFET N-CH 20V 4.2A SOT23
DMG2307L-7 MOSFET P-CH 30V 2.5A SOT-23
DMG3414U-7 MOSFET N-CH 20V 4.2A SOT23
相关代理商/技术参数
DMG1023UV 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
DMG1023UV-7 功能描述:MOSFET MOSFET P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG1024UV 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG1024UV-7 功能描述:MOSFET MOSFET N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG1026UV 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W ESD 60V SOT563 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W ESD, 60V, SOT563 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W ESD, 60V, SOT563; Transistor Polarity:N Channel; Continuous Drain Current Id:410mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:580mW; No. of Pins:6 ;RoHS Compliant: Yes
DMG1026UV-7 功能描述:MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG1029SV-7 功能描述:MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG-103L 制造商:Alpha 3 Manufacturing 功能描述: